KINETICS OF SI(100) NITRIDATION 1ST STAGES BY AMMONIA - ELECTRON-BEAM-INDUCED THIN-FILM GROWTH AT ROOM-TEMPERATURE

被引：52

作者：

GLACHANT, A

SAIDI, D

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 04期

关键词：

D O I：

10.1116/1.583027

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：985 / 991

页数：7

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共 29 条

[1] EMISSIVITY AT 0.65 MICRON OF SILICON AND GERMANIUM AT HIGH TEMPERATURES
ALLEN, FG
[J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) : 1510 - 1511
[2] DETERMINATION OF MONOLAYER COVERAGE BY AUGER-ELECTRON SPECTROSCOPY - APPLICATION TO CARBON ON PLATINUM
BIBERIAN, JP
SOMORJAI, GA
[J]. APPLIED SURFACE SCIENCE, 1979, 2 (03) : 352 - 358
[3] SILICON-NITRIDE FILMS DEPOSITED WITH AN ELECTRON-BEAM CREATED PLASMA
BISHOP, DC
EMERY, KA
ROCCA, JJ
THOMPSON, LR
ZARNANI, H
COLLINS, GJ
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (06) : 598 - 600
[4] ESTIMATES OF EFFICIENCIES OF PRODUCTION AND DETECTION OF ELECTRON-EXCITED AUGER EMISSION
BISHOP, HE
RIVIERE, JC
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (04) : 1740 - &
[5] FORMATION OF SILICON-NITRIDE STRUCTURES BY DIRECT ELECTRON-BEAM WRITING
CHIN, BH
EHRLICH, G
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (04) : 253 - 255
[6] NITRIDATION OF SILICON (111) - AUGER AND LEED RESULTS
DELORD, JF
SCHROTT, AG
FAIN, SC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01): : 517 - 520
[7] SIO2 ULTRA THIN-FILM GROWTH-KINETICS AS INVESTIGATED BY SURFACE TECHNIQUES
DERRIEN, J
COMMANDRE, M
[J]. SURFACE SCIENCE, 1982, 118 (1-2) : 32 - 46
[8] ERTL G, 1982, SURF SCI, V119, pL314, DOI 10.1016/0039-6028(82)90173-X
[9] FRIESER RG, 1968, J ELECTROCHEM SOC, V115, P1902
[10] A SIMPLE MODEL FOR DEPENDENCE OF AUGER INTENSITIES ON SPECIMEN THICKNESS
GALLON, TE
[J]. SURFACE SCIENCE, 1969, 17 (02) : 486 - &