THE LOCALIZATION AND CRYSTALLOGRAPHIC DEPENDENCE OF SI SUBOXIDE SPECIES AT THE SIO2/SI INTERFACE

被引：286

作者：

GRUNTHANER, PJ ^{[1
]}

HECHT, MH ^{[1
]}

GRUNTHANER, FJ ^{[1
]}

JOHNSON, NM ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 02期

关键词：

D O I：

10.1063/1.338215

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：629 / 638

页数：10

共 32 条

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[8] SURFACE-ROUGHNESS AT THE SI(100)-SIO2 INTERFACE
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[10] HIGH-RESOLUTION X-RAY PHOTOELECTRON-SPECTROSCOPY AS A PROBE OF LOCAL ATOMIC-STRUCTURE - APPLICATION TO AMORPHOUS SIO2 AND THE SI-SIO2 INTERFACE
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[J]. PHYSICAL REVIEW LETTERS, 1979, 43 (22) : 1683 - 1686

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