EFFECT OF HEAT-TREATMENT ON CHEMICAL AND ELECTRONIC-STRUCTURE OF SOLID SIO - ELECTRON-SPECTROSCOPY STUDY

被引：72

作者：

HOLLINGER, G ^{[1
]}

JUGNET, Y ^{[1
]}

DUC, TM ^{[1
]}

机构：

[1] UNIV LYON 1,INST PHYS NUCL,F-69621 VILLEURBANNE,FRANCE

来源：

关键词：

D O I：

10.1016/0038-1098(77)91430-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：277 / 280

页数：4

共 19 条

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EDWARDS, RK
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[2] BREWER W, 1957, J PHYS CHEM SOLIDS, V2, P286
[3] CACHARD A, 1971, THESIS LYON
[4] ELECTRONIC DISTRIBUTION OF SIO BY X-RAY SPECTROSCOPY
COSTALIMA, MT
SENEMAUD, C
[J]. CHEMICAL PHYSICS LETTERS, 1976, 40 (01) : 157 - 159
[5] DISPROPORTIONATION AND VAPORIZATION OF SOLID SILICON MONOXIDE
HERTL, W
PULTZ, WW
[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1967, 50 (07) : 378 - &
[6] X-RAY PHOTOELECTRON-SPECTROSCOPY OF THERMALLY GROWN SILICON DIOXIDE FILMS ON SILICON
HOLLINGER, G
JUGNET, Y
PERTOSA, P
DUC, TM
[J]. CHEMICAL PHYSICS LETTERS, 1975, 36 (04) : 441 - 445
[7] HOLLINGER G, 1976, J MICROSC SPECT ELEC, V1, P335
[8] HOLLINGER G, 1974, TETRAHEDRALLY BONDED, P102
[9] HOLLINGER G, TO BE PUBLISHED
[10] HOWSON RP, 1971, THIN SOLID FILMS, V9, P109