X-RAY PHOTOELECTRON-SPECTROSCOPY OF THERMALLY GROWN SILICON DIOXIDE FILMS ON SILICON

被引：125

作者：

HOLLINGER, G

JUGNET, Y

PERTOSA, P

DUC, TM

机构：

[1] UNIV CLAUDE BERNARD,INST PHYS NUCL,LYON 1,FRANCE

[2] IN2P3,69621 VILLEURBANNE,FRANCE

来源：

CHEMICAL PHYSICS LETTERS | 1975年 / 36卷 / 04期

关键词：

D O I：

10.1016/0009-2614(75)80276-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：441 / 445

页数：5

共 11 条

[1] ELECTRON-SPECTROSCOPY STUDIES OF ADSORPTION AND OXIDATION PROCESSES AT METAL-SURFACES [J].

BRUNDLE, CR .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1974, 5 (NOV-D) :291-319

[2]

ESCARD J, 1973, CR ACAD SCI B PHYS, V277, P519

[3] ELECTRON MEAN ESCAPE DEPTHS FROM X-RAY PHOTOELECTRON-SPECTRA OF THERMALLY OXIDIZED SILICON DIOXIDE FILMS ON SILICON [J].

FLITSCH, R ;

RAIDER, SI .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01) :305-308

[4]

HOLLINGER G, 1973, JOURNEE ESCA GAMS PA

[5] ELECTRON ORBITAL ENERGIES OF OXYGEN ADSORBED ON SILICON SURFACES AND OF SILICON DIOXIDE [J].

IBACH, H ;

ROWE, JE .

PHYSICAL REVIEW B, 1974, 10 (02) :710-718

[6]

Kim K.S., 1972, J ELECTRON SPECTROSC, V1, P251, DOI [DOI 10.1016/0368-2048(72)85014-X, DOI 10.1016/S0368-2048(01)00249-3]

[7] ELECTRON ESCAPE DEPTH IN SILICON [J].

KLASSON, M ;

BERNDTSSON, A ;

HEDMAN, J ;

NILSSON, R ;

NYHOLM, R ;

NORDLING, C .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1974, 3 (06) :427-434

[8] RELATIVE EFFECT OF EXTRA-ATOMIC RELAXATION ON AUGER AND BINDING-ENERGY SHIFTS IN TRANSITION-METALS AND SALTS [J].

KOWALCZY.SP ;

LEY, L ;

MCFEELY, FR ;

POLLAK, RA ;

SHIRLEY, DA .

PHYSICAL REVIEW B, 1974, 9 (02) :381-391

[9]

Philipp H. R., 1972, J NONCRYST SOLIDS, V8, P627

[10] ELECTRON-SPECTROSCOPY - OUTLOOK [J].

SIEGBAHN, K .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1974, 5 (NOV-D) :3-97

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