ELECTRON ORBITAL ENERGIES OF OXYGEN ADSORBED ON SILICON SURFACES AND OF SILICON DIOXIDE

被引：269

作者：

IBACH, H ^{[1
]}

ROWE, JE ^{[1
]}

机构：

[1] BELL TEL LAB INC,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1974年 / 10卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.10.710

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：710 / 718

页数：9

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