Spectroscopic investigations of photoinduced changes of the spatial distribution of charge carriers in modulation-doped quantum-well structures

被引：3

作者：

Hartmann, R

Kraus, J

Schaack, G

Panzlaff, K

机构：

[1] UNIV WURZBURG,INST PHYS,D-97074 WURZBURG,GERMANY

[2] UNIV ULM,ABT OPTOELEKTR,D-89069 ULM,GERMANY

来源：

PHYSICAL REVIEW B | 1996年 / 53卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.53.13011

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated the photoinduced changes of the spatial distribution of the free holes in p-type modulation-doped GaAs/AlxGa1-xAs heterostructures by measuring the energy of the quantum-well luminescence, which is conditioned by the many-particle effect of band-gap renormalization and the excitonic interactions between the electrons and holes. A conventional chopper technique with millisecond time resolution permitted us to study the dynamics of the hole density variations in the quantum wells. The strength of excitonic effects on the luminescence signals could be estimated by application of a magnetic field oriented parallel to the growth direction of the samples.

引用

页码：13011 / 13015

页数：5

共 21 条

[1] CARRIER SCATTERING AND EXCITONIC EFFECTS ON ELECTRON-HOLE-PAIR DIFFUSION IN NONDOPED AND P-TYPE-MODULATION-DOPED GAAS ALXGA1-XAS QUANTUM-WELL STRUCTURES [J].