CARRIER SCATTERING AND EXCITONIC EFFECTS ON ELECTRON-HOLE-PAIR DIFFUSION IN NONDOPED AND P-TYPE-MODULATION-DOPED GAAS ALXGA1-XAS QUANTUM-WELL STRUCTURES

被引:21
作者
AKIYAMA, H
MATSUSUE, T
SAKAKI, H
机构
[1] RES DEV CORP JAPAN,ERATO,QUANTUM WAVE PROJECT,MEGURO KU,TOKYO 153,JAPAN
[2] UNIV TOKYO,INST IND SCI,MINATO KU,TOKYO 106,JAPAN
来源
PHYSICAL REVIEW B | 1994年 / 49卷 / 20期
关键词
D O I
10.1103/PhysRevB.49.14523
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have performed lateral-diffusion measurements of photoexcited electron-hole pairs at various excitation densities for nondoped and p-type-modulation-doped GaAs/Al0.3Ga0.7As multiple-quantum-well structures at 77 K, using an all-optical time-of-flight technique with a single-mode optical-fiber probe. Systematic measurements at various electron and hole densities revealed remarkable deviation from the conventional ambipolar diffusion, indicating the important contribution of carrier-carrier scattering and excitonic effects to the diffusion.
引用
收藏
页码:14523 / 14530
页数:8
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