InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition

被引：61

作者：

Egawa, T ^{[1
]}

Zhang, B ^{[1
]}

Nishikawa, N ^{[1
]}

Ishikawa, H ^{[1
]}

Jimbo, T ^{[1
]}

Umeno, M ^{[1
]}

机构：

[1] Nagoya Inst Technol, Res Ctr Microstruct Devices, Showa Ku, Nagoya, Aichi 4668555, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 91卷 / 01期

关键词：

D O I：

10.1063/1.1408264

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the characteristics of InGaN multiple-quantum-well (MQW) green light-emitting diodes (LEDs) on Si (111) substrates. The MQW LEDs were grown on Si by metalorganic chemical vapor deposition using Al0.27Ga0.73N/AlN intermediate layers. The LED on Si showed an operating voltage of 7 V, a series resistance of 100 Omega, an optical output power of 20 muW, and a peak emission wavelength of 505 nm with a full width at half maximum of 33 nm at 20 mA drive current. The optical output power was half as compared to that of green LED on sapphire. The LED also exhibited a stable operation over 500 h under automatic current control (20 mA) condition at 27 degreesC. (C) 2002 American Institute of Physics.

引用

页码：528 / 530

页数：3