Realization of defect-free epitaxial core-shell GaAs/AlGaAs nanowire heterostructures

被引：52

作者：

Tambe, Michael J. ^{[1
]}

Lim, Sung Keun ^{[1
]}

Smith, Matthew J. ^{[1
]}

Allard, Lawrence F. ^{[2
]}

Gradecak, Silvija ^{[1
]}

机构：

[1] MIT, Dept Mat & Engn, Cambridge, MA 02139 USA

[2] Oak Ridge Natl Lab, High Temp Mat Lab, Oak Ridge, TN 37831 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 15期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.3002299

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the controlled growth of vertically aligned GaAs/AlGaAs core-shell nanowires. By optimizing the shell deposition temperature and catalyst density we maintain high temperature stability and achieve defect-free epitaxial AlGaAs shell deposition with high aluminum incorporation. Energy dispersive x-ray analysis determines the shell composition to be Al0.9Ga0.1As and measures the uniformity of the shell thickness. Lattice-resolved high-angle annular dark-field scanning transmission electron microscopy images confirm the core-shell interface to be defect-free, epitaxial, and atomically sharp. The ability to realize GaAs/AlGaAs core-shell nanowires with precise control over the morphology and composition is essential to the development of nanowire-based high mobility electronics. (c) 2008 American Institute of Physics.

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页数：3

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