Mean-field approach to disorder effects on ferromagnetism in Ga1-xMnxAs

被引:12
作者
Berciu, M [1 ]
Bhatt, RN [1 ]
机构
[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
关键词
diluted magnetic semiconductors; ferromagnetism;
D O I
10.1016/S0921-4526(01)01209-1
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Using a numerical mean field treatment, we examine the onset of ferromagnetism and the nature of the ferromagnetic phase in Ga1-xMnxAs for charge carrier densities in the vicinity of the metal insulator transition. Our approach, which explicitly takes into account the positional disorder of the Mn ions, shows that the ferromagnetic transition temperature is significantly enhanced by the disorder. Concurrently, a very unusual temperature dependence of the magnetization is obtained in the ferromagnetic phase. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:815 / 817
页数:3
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