Laser-induced modification of electron field emission from nanocrystalline diamond films

被引:15
作者
Ugarov, MV
Ageev, VP
Karabutov, AV
Loubnin, EN
Pimenov, SM
Konov, VI
Bensaoula, A
机构
[1] Russian Acad Sci, Inst Gen Phys, Ctr Nat Sci, Moscow 117942, Russia
[2] Univ Houston, Ctr Space Vacuum Epitaxy, Houston, TX 77004 USA
关键词
D O I
10.1063/1.370624
中图分类号
O59 [应用物理学];
学科分类号
摘要
A significant reduction of electron field emission thresholds resulting from ArF laser irradiation of nanocrystalline diamond films in borazine (B3N3H6) and ammonia (NH3) atmospheres is reported. The change of emission characteristics is not connected with either laser surface graphitization or formation of bulk defects. X-ray photoelectron spectroscopy surface analysis and Raman spectroscopy data from these samples show that laser irradiation results in the synthesis of ultrathin layers of boron-carbon-nitrogen and in B and N atoms intergrain penetration into the film to a depth above 50 Angstrom. The synthesis of the ternary B-C-N and the presence of sp(2) bonded C-N compounds is demonstrated. (C) 1999 American Institute of Physics. [S0021-8979(99)04112-2].
引用
收藏
页码:8436 / 8440
页数:5
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