Growth of copper thin films on sputtered-TiN surfaces by metallorganic chemical vapour deposition from (hfac)Cu-(I)(VTMS)

Copper (Cu) films were deposited on sputtered TiN with metallorganic chemical vapour deposition (MOCVD) from (hexafluoroacetylacetonate) Cu-(I) (vinyltrimethylsilane) [(hfac)Cu-(I)(VTMS)] at substrate temperatures of 100-300 degrees C, total pressures of 10-2000 mtorr (1-300 Pa) and bubbler temperature of 50 degrees C with Ar carrier gas. Cu was deposited in the form of discontinuous islands up to the film thickness of about 100 nm on the TiN substrate. The orientation of growing films was changed from random orientation to [111] with increasing deposition time and temperature. Increasing temperature increased the surface roughness of the film, and grain coalescence. Resistivity was increased due to the carbon incorporation from the thermal decomposition of Cu precursor.