Enhanced low-temperature thermoelectrical properties of BiTeCl grown by topotactic method

被引:36
作者
Jacimovic, J. [1 ]
Mettan, X. [1 ]
Pisoni, A. [1 ]
Gaal, R. [1 ]
Katrych, S. [1 ]
Demko, L. [3 ,4 ]
Akrap, A. [2 ]
Forro, L. [1 ]
Berger, H. [5 ]
Bugnon, P. [5 ]
Magrez, A. [5 ]
机构
[1] Ecole Polytech Feederale Lausanne, Lab Phys Complex Matter, CH-1015 Lausanne, Switzerland
[2] Univ Geneva, CH-1211 Geneva 4, Switzerland
[3] Tech Univ Budapest, Dept Phys, H-1111 Budapest, Hungary
[4] Hungarian Acad Sci, Econ & Condensed Matter Res Grp, H-1111 Budapest, Hungary
[5] Ecole Polytech Feederale Lausanne, Crystal Growth Facil, CH-1015 Lausanne, Switzerland
基金
瑞士国家科学基金会;
关键词
Thermoelectric; Topotactic growth; Topological insulator; BiTeCl; PERFORMANCE;
D O I
10.1016/j.scriptamat.2013.12.017
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We developed a topotactic strategy to grow BiTeCl single crystals. Structural characterization by means of X-ray diffraction was performed, and the high crystallinity of the material was proven. Measurements of the thermoelectrical coefficients electrical resistivity, thermoelectric power and thermal conductivity show an enhanced room temperature power factor of 20 mu W cm(-1) K-2. The high value of the figure of merit (ZT = 0.17) confirms that BiTeCl is a promising material for engineering in thermoelectric applications at low temperature. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:69 / 72
页数:4
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