Low temperature resistivity, thermoelectricity, and power factor of Nb doped anatase TiO2

被引：13

作者：

Jacimovic, J. ^{[1
]}

Gaal, R. ^{[1
]}

Magrez, A. ^{[1
]}

Piatek, J. ^{[1
]}

Forro, L. ^{[1
]}

Nakao, S. ^{[2
,3
,4
]}

Hirose, Y. ^{[2
,3
,4
]}

Hasegawa, T. ^{[2
,3
,4
]}

机构：

[1] Ecole Polytech Fed Lausanne, Lab Phys Complex Matter, CH-1015 Lausanne, Switzerland

[2] KAST, Kawasaki, Kanagawa 2130012, Japan

[3] Univ Tokyo, Dept Chem, Tokyo 1130033, Japan

[4] JST CREST, Tokyo 1130033, Japan

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 01期

基金：

瑞士国家科学基金会;

关键词：

SINGLE-CRYSTALS;

D O I：

10.1063/1.4773517

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The resistivity of a very high quality anatase TiO2 doped with 6% of Nb was measured from 300K down to 40 mK. No sign of superconductivity was detected. Instead, a minute quantity of cation vacancies resulted in a Kondo scattering. Measurements of thermo-electric power and resistivity were extended up to 600 K. The calculated power factor has a peak value of 14 mu W/(K(2)cm) at 350 K, which is comparable to that of Bi2Te3 [Venkatasubramanian et al., Nature 413, 597 (2001)], the archetype thermolectrics. Taking the literature value for the thermal conductivity of Nb doped TiO2 thin films, the calculated figure of merit (ZT) is in the range of 0.1 above 300 K. This value is encouraging for further engineering of the material in order to reach ZT of 1 suitable for high temperature thermoelectrics. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4773517]

引用

页数：3

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