Investigation of modified 3C SiC(100) surfaces by surface-sensitive techniques

We studied 3C-SiC(100) surfaces with various reconstructions by high-resolution electron energy-loss spectroscopy (HREELS), Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) and low-energy electron diffraction (LEED). After annealing at 1325 K oxygen desorbs and a Si-terminated (2 x 1) surface is obtained. Subsequent annealing at higher temperatures leads to the sublimation of Si, which results in a carbon-rich c(2 x 2) surface. We exposed (2 x 1) and c(2 x 2) surfaces to atomic hydrogen, and were able to observe the H-Si-H stretching vibration on silicon carbide. (C) 1997 Elsevier Science S.A.