Phase separation on solid surfaces: nucleation, coarsening and coalescence kinetics

被引:141
作者
Zinke-Allmang, M [1 ]
机构
[1] Univ Western Ontario, Dept Phys & Astron, London, ON N6A 3K7, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
phase separation; solid surfaces; nucleation; coarsening; coalescence;
D O I
10.1016/S0040-6090(98)01479-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Fundamental issues of the kinetics of phase separations on surfaces are reviewed with an emphasis on developments during the period from 1990 to present. Issues covered include: (i) the stability of thin films toward clustering, (ii) non-uniform film formation during deposition and (iii) non-uniform film evolution in the post-deposition phase. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:1 / 68
页数:68
相关论文
共 360 条
[81]   GROWTH RIPPLES UPON STRAINED SIGE EPITAXIAL LAYERS ON SI AND MISFIT DISLOCATION INTERACTIONS [J].
CULLIS, AG ;
ROBBINS, DJ ;
BARNETT, SJ ;
PIDDUCK, AJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1994, 12 (04) :1924-1931
[82]   Lateral and vertical ordering in multilayered self-organized InGaAs quantum dots studied by high resolution x-ray diffraction [J].
Darhuber, AA ;
Holy, V ;
Stangl, J ;
Bauer, G ;
Krost, A ;
Heinrichsdorff, F ;
Grundmann, M ;
Bimberg, D ;
Ustinov, VM ;
Kopev, PS ;
Kosogov, AO ;
Werner, P .
APPLIED PHYSICS LETTERS, 1997, 70 (08) :955-957
[83]   EFFECT OF VOLUME FRACTION OF PRECIPITATE ON OSTWALD RIPENING [J].
DAVIES, CKL ;
NASH, P ;
STEVENS, RN .
ACTA METALLURGICA, 1980, 28 (02) :179-189
[84]   AFM and RHEED study of Ge islanding on Si(111) and Si(100) [J].
Deelman, PW ;
Thundat, T ;
Schowalter, LJ .
APPLIED SURFACE SCIENCE, 1996, 104 :510-515
[85]   GEOMETRIC CHARACTERIZATION OF DISCONTINUED METALLIC DEPOSITS ON CARBON-FILM DEDUCED FROM SINGLE MEASUREMENTS OF MASS THICKNESS AND SHEET CONDUCTANCE [J].
DESROUSSEAUX, G ;
CARLAN, A ;
ROBRIEUX, B ;
SCHAFFAR, H ;
TROMPETTE, J ;
DUSSAULCY, JP ;
FAURE, R .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1985, 46 (08) :929-943
[86]   COHERENT ISLANDS AND MICROSTRUCTURAL EVOLUTION [J].
DRUCKER, J .
PHYSICAL REVIEW B, 1993, 48 (24) :18203-18206
[87]  
DRUCKER J, 1993, SCANNING MICROSCOPY, V7, P489
[88]   GROWTH-MORPHOLOGY AND THE EQUILIBRIUM SHAPE - THE ROLE OF SURFACTANTS IN GE/SI ISLAND FORMATION [J].
EAGLESHAM, DJ ;
UNTERWALD, FC ;
JACOBSON, DC .
PHYSICAL REVIEW LETTERS, 1993, 70 (07) :966-969
[89]   ISLAND FORMATION IN GE/SI EPITAXY [J].
EAGLESHAM, DJ ;
HULL, R .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 30 (2-3) :197-200
[90]  
Egorov AY, 1996, SEMICONDUCTORS+, V30, P879