High-performance poly(3-hexylthiophene) field-effect transistors fabricated by a slide-coating method

被引:24
作者
Karakawa, Makoto [1 ]
Chikamatsu, Masayuki [1 ]
Yoshida, Yuji [1 ]
Oishi, Makoto [1 ]
Azumi, Reiko [1 ]
Yase, Kiyoshi [1 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, Photon Res Inst, Tsukuba, Ibaraki 3058565, Japan
关键词
D O I
10.1143/APEX.1.061802
中图分类号
O59 [应用物理学];
学科分类号
摘要
Highly oriented thin-films of poly(3-hexylthiophene) (P3HT) have been successfully fabricated by slide-coating method, in which the chloroform solution is sandwiched between a Si wafer and a slide glass, and followed by slow drawing of the Si wafer with respect to the slide glass. The performance of this organic field-effect transistor (OFET) based on the P3HT film exhibit high-performance of up to 0.056 cm(2) V-1 s(-1) in FET mobility. This simple solution process is an effective method to fabricate the well-ordered structure of the P3HT film and its OFETs. (C) 2008 The Japan Society of Applied Physics.
引用
收藏
页码:0618021 / 0618023
页数:3
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