High-performance poly(3-hexylthiophene) field-effect transistors fabricated by a slide-coating method

被引：24

作者：

Karakawa, Makoto ^{[1
]}

Chikamatsu, Masayuki ^{[1
]}

Yoshida, Yuji ^{[1
]}

Oishi, Makoto ^{[1
]}

Azumi, Reiko ^{[1
]}

Yase, Kiyoshi ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Photon Res Inst, Tsukuba, Ibaraki 3058565, Japan

来源：

APPLIED PHYSICS EXPRESS | 2008年 / 1卷 / 06期

关键词：

D O I：

10.1143/APEX.1.061802

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly oriented thin-films of poly(3-hexylthiophene) (P3HT) have been successfully fabricated by slide-coating method, in which the chloroform solution is sandwiched between a Si wafer and a slide glass, and followed by slow drawing of the Si wafer with respect to the slide glass. The performance of this organic field-effect transistor (OFET) based on the P3HT film exhibit high-performance of up to 0.056 cm(2) V-1 s(-1) in FET mobility. This simple solution process is an effective method to fabricate the well-ordered structure of the P3HT film and its OFETs. (C) 2008 The Japan Society of Applied Physics.

引用

页码：0618021 / 0618023

页数：3

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