Pd/TiOx/Ti-Au (x < 2) metal-active insulator-metal (MIM) hydrogen gas sensor at elevated temperatures

被引：3

作者：

Hazra, SK ^{[1
]}

Basu, S ^{[1
]}

机构：

[1] Indian Inst Technol, Ctr Mat Sci, Kharagpur 721302, W Bengal, India

来源：

SENSOR LETTERS | 2005年 / 3卷 / 02期

关键词：

TiOx; MIM; hydrogen sensor;

D O I：

10.1166/sl.2005.015

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Al doped polycrystalline titanium dioxide was grown by thermal oxidation at 800 degrees C on 0.25 mm thick titanium substrates with gold coating on the back surface. Resistivity, carrier density and mobility were measured at room temperature. The grown oxide showed n-type conductivity. Pd metal dots (1.5 mm dia) were deposited on the oxide surface to fabricate Pd/TiOx/Ti-Au (x < 2) MIM sensor structure. The I-V study was carried out with 500 ppm hydrogen in the temperature range 200-350 degrees C and the current increased upon exposure to hydrogen. The sensitivity and the change in barrier height were calculated and were found to maximize at 300 degrees C beyond which the values started decreasing. The response time as calculated from the transient response characteristics was 16 sec at 300 degrees C.

引用

页码：179 / 182

页数：4

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Pd/TiOx/Ti-Au (x &lt; 2) metal-active insulator-metal (MIM) hydrogen gas sensor at elevated temperatures

Pd/TiOx/Ti-Au (x < 2) metal-active insulator-metal (MIM) hydrogen gas sensor at elevated temperatures