Enhancement of H2 sensing properties of NiO-based thin films with a Pt surface modification

被引:125
作者
Hotovy, I
Huran, J
Siciliano, P
Capone, S
Spiess, L
Rehacek, V
机构
[1] Slovak Tech Univ, Dept Microelect, Bratislava 81219, Slovakia
[2] Slovak Acad Sci, Inst Elect Engn, Bratislava 84239, Slovakia
[3] Sez Lecce, IMM, CNR, Inst Microelect & Microsyst, I-73100 Lecce, Italy
[4] Tech Univ Ilmenau, Inst Werkstofftech, D-98684 Ilmenau, Germany
关键词
nickel oxide; thin films; surface modification; Pt; H-2; sensor;
D O I
10.1016/j.snb.2004.04.109
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
In this paper, we present the results concerning the Pt surface modification of nickel oxide thin films deposited by dc reactive magnetron sputtering. Pt very thin overlayers; with a thickness of about 3 and 5 nm have been sputtered on the top of NiO samples. The surface structure and morphology of the samples have been analysed by X-ray diffractometer (XRD) and by scanning electron microscopy (SEM) and atomic force microscopy (AFM), respectively. The electrical responses of the NiO-based sensors towards different H-2 concentration (500-5000 ppm) have been also considered. The Pt-modified NiO samples showed an enhancement of the response towards H-2 as compared to the unmodified NiO sample. The thickness of the Pt thin layers seems also an important parameter in determining the properties of the NiO films as H-2 sensors. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:300 / 311
页数:12
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