共 21 条
[21]
ZAITSEV AG, 1997, J APPL PHYS, V81, P3039
Microstructural analysis in epitaxial zirconia layers
被引：16
作者：
Boulle, A
Pradier, L
Masson, O
Guinebretière, R
Dauger, A
机构：
[1] ENSCI, UMR 6638, F-87065 Limoges, France
[2] Fac Sci, F-87060 Limoges, France
关键词：
oxide layer;
X-ray diffraction;
epitaxy;
sol-gel;
D O I：
10.1016/S0169-4332(01)00710-3
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ;
081704 ;
摘要：
Y2O3 stabilised ZrO2 (YSZ) layers were deposited on (11 (2) over bar0) Al2O3 by sol-gel dip-coating, A low temperature heat treatment produces a poly crystalline film. Further heating at 1500 degreesC yields an epitaxial layer by grain growth of the islands with the lowest interfacial energy. We used a home-made high resolution diffractometer to record reciprocal space maps of the YSZ layer. The simulation of the diffraction profiles with a kinematical scattering model enables us to extract the strain profile within the layer, the average thickness and the vertical island size distribution, (C) 2002 Elsevier Science B.V. All rights reserved.
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页码：80 / 84
页数：5
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