Strain dependent gap nature of epitaxial β-FeSi2 in silicon by first principles calculations

被引：68

作者：

Miglio, L

Meregalli, V

Jepsen, O

机构：

[1] Univ Milano Bicocca, INFM, I-20125 Milan, Italy

[2] Univ Milano Bicocca, Dipartimento Sci Mat, I-20125 Milan, Italy

[3] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 03期

关键词：

D O I：

10.1063/1.124383

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, we show that the gap nature in beta-FeSi2 is turned from indirect to direct when a suitable strain field is induced in the structure. Such a lattice deformation corresponds to a full lattice matching for the epitaxial relationship beta-FeSi2(110)//Si(111), which is one of the most common orientations occurring to beta-FeSi2 precipitates in silicon. (C) 1999 American Institute of Physics. [S0003-6951(99)01829-X].

引用

页码：385 / 387

页数：3

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