Quantitative Determination of the Band Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors

被引：477

作者：

Braga, Daniele ^{[1
,2
]}

Lezama, Ignacio Gutierrez ^{[1
,2
]}

Berger, Helmuth ^{[3
]}

Morpurgo, Alberto F. ^{[1
,2
]}

机构：

[1] Univ Geneva, DPMC, CH-1211 Geneva, Switzerland

[2] Univ Geneva, GAP, CH-1211 Geneva, Switzerland

[3] Ecole Polytech Fed Lausanne, Inst Phys Mat Complexe, CH-1015 Lausanne, Switzerland

来源：

NANO LETTERS | 2012年 / 12卷 / 10期

基金：

瑞士国家科学基金会;

关键词：

Ionic liquid-gated transistors; ambipolar FETs; transition metal dichalcogenides; exfoliated crystals; FIELD-EFFECT TRANSISTORS; TUNGSTEN DISULFIDE; TRANSITION; MOS2; SEMICONDUCTOR; TRANSPORT; SURFACE; GROWTH; SUPERCONDUCTIVITY; CRYSTALS;

D O I：

10.1021/nl302389d

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We realized ambipolar field-effect transistors by coupling exfoliated thin flakes of tungsten disulfide (WS2) with an ionic liquid dielectric. The devices show ideal electrical characteristics, including very steep subthreshold slopes for both electrons and holes and extremely low OFF-state currents. Thanks to these ideal characteristics, we determine with high precision the size of the band gap of WS2 ddirectly from the gate-voltage dependence of the source-drain current. Our results demonstrate how a careful use of ionic liquid dielectrics offers a powerful strategy to study quantitatively the electronic properties of nanoscale materials.

引用

页码：5218 / 5223

页数：6

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