Giant Piezoresistive On/Off Ratios in Rare-Earth Chalcogenide Thin Films Enabling Nanomechanical Switching

被引：32

作者：

Copel, M. ^{[1
]}

Kuroda, M. A. ^{[1
]}

Gordon, M. S. ^{[1
]}

Liu, X-H ^{[1
]}

Mahajan, S. S. ^{[1
]}

Martyna, G. J. ^{[1
]}

Moumen, N. ^{[1
]}

Armstrong, C. ^{[1
]}

Rossnagel, S. M. ^{[1
]}

Shaw, T. M. ^{[1
]}

Solomon, P. M. ^{[1
]}

Theis, T. N. ^{[1
]}

Yurkas, J. J. ^{[1
]}

Zhu, Y. ^{[1
]}

Newns, D. M. ^{[1
]}

机构：

[1] IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

NANO LETTERS | 2013年 / 13卷 / 10期

关键词：

Piezoresistance; piezotronic; chalcogenide; electrical transport; nanoelectromechanical systems (NEMS); MEMS; METAL TRANSITION; PRESSURE; SEMICONDUCTOR; EU; SI;

D O I：

10.1021/nl401710f

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Sophisticated microelectromechanical systems for device and sensor applicaticns have flourished in the past decade. These devices exploit piezoelectric, capacitive, and piezoresistive effects, and coupling between them. However, high-performance piezoresiitivity (as defined by on/off ratio) has primarily been observei in macroscopic single crystals.' In 10 this Letter, we show for the first time that rare-earth monochalcogenides in thin film form can modulate a current by more than 1000 times clue to a pressure-induced insulator to metal transition. Furtherniorc, films as thin as 8 nm show a piezoresistive response. The conlbination of high performance and scalability make these promising applications, such as the recently proposed piezoelectronic transistor (PET) 2,3 The PET would mechanically couple a piezoelectric thin film with II a piezoresistive switching layer, potentially scaling to higher speeds and lower powers than today's complementary metal oxide scmiconductor technology.

引用

页码：4650 / 4653

页数：4

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