Atomic ordering and temperature-dependent transient photoconductivity in Ga0.47In0.53As

被引:8
作者
Ahrenkiel, SP [1 ]
Johnston, SW [1 ]
Ahrenkiel, RK [1 ]
Arent, DJ [1 ]
Hanna, MC [1 ]
Wanlass, MW [1 ]
机构
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
关键词
D O I
10.1063/1.124152
中图分类号
O59 [应用物理学];
学科分类号
摘要
Influences of CuPtB atomic ordering on transient photoconductivity in epitaxial Ga0.47In0.53As films grown by metal-organic chemical vapor deposition are examined. Low-injection lifetimes of several ms are measured in double-variant ordered samples at 77 K; these lifetimes decrease rapidly with temperatures above 180 K, giving a thermal activation energy for recombination of 0.19 eV. Single-variant ordered samples exhibit typical lifetimes of 30-60 mu s, with no noticeable temperature dependence up to 300 K. Charge separation in double-variant samples may be driven by a type-II band alignment between ordered and disordered regions, or by an alternating internal electrical polarization between ordered variants. Recombination in both double- and single-variant samples may be influenced by inhibited transport across antiphase boundaries. (C) 1999 American Institute of Physics. [S0003-6951(99)05223-7].
引用
收藏
页码:3534 / 3536
页数:3
相关论文
共 15 条
  • [1] Carrier transport in ordered and disordered In0.53Ga0.47As
    Ahrenkiel, RK
    Ahrenkiel, SP
    Arent, DJ
    Olson, JM
    [J]. APPLIED PHYSICS LETTERS, 1997, 70 (06) : 756 - 758
  • [2] Recombination lifetime of In0.53Ga0.47As as a function of doping density
    Ahrenkiel, RK
    Ellingson, R
    Johnston, S
    Wanlass, M
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (26) : 3470 - 3472
  • [3] BAND-GAP NARROWING IN ORDERED GA0.47IN0.53AS
    ARENT, DJ
    BODE, M
    BERTNESS, KA
    KURTZ, SR
    OLSON, JM
    [J]. APPLIED PHYSICS LETTERS, 1993, 62 (15) : 1806 - 1808
  • [4] THE MORPHOLOGY OF ORDERED STRUCTURES IN III-V ALLOYS - INFERENCES FROM A TEM STUDY
    BAXTER, CS
    STOBBS, WM
    WILKIE, JH
    [J]. JOURNAL OF CRYSTAL GROWTH, 1991, 112 (2-3) : 373 - 385
  • [5] EVIDENCE FOR SPATIALLY INDIRECT RECOMBINATION IN GA0.52IN0.48P
    DELONG, MC
    OHLSEN, WD
    VIOHL, I
    TAYLOR, PC
    OLSON, JM
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 70 (05) : 2780 - 2787
  • [6] UNUSUAL PROPERTIES OF PHOTOLUMINESCENCE FROM PARTIALLY ORDERED GA0.5IN0.5P
    FOUQUET, JE
    ROBBINS, VM
    ROSNER, SJ
    BLUM, O
    [J]. APPLIED PHYSICS LETTERS, 1990, 57 (15) : 1566 - 1568
  • [7] SURFACE-TOPOGRAPHY AND ORDERING-VARIANT SEGREGATION IN GALNP2
    FRIEDMAN, DJ
    ZHU, JG
    KIBBLER, AE
    OLSON, JM
    MORELAND, J
    [J]. APPLIED PHYSICS LETTERS, 1993, 63 (13) : 1774 - 1776
  • [8] Polarization fields and band offsets in GaInP/GaAs and ordered/disordered GaInP superlattices
    Froyen, S
    Zunger, A
    Mascarenhas, A
    [J]. APPLIED PHYSICS LETTERS, 1996, 68 (20) : 2852 - 2854
  • [9] EVIDENCE FOR THE EXISTENCE OF AN ORDERED STATE IN GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY AND ITS RELATION TO BAND-GAP ENERGY
    GOMYO, A
    SUZUKI, T
    KOBAYASHI, K
    KAWATA, S
    HINO, I
    YUASA, T
    [J]. APPLIED PHYSICS LETTERS, 1987, 50 (11) : 673 - 675
  • [10] Evidence for internal electric fields in two variant ordered GaInP obtained by scanning capacitance microscopy
    Leong, JK
    Williams, CC
    Olson, JM
    Froyen, S
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (26) : 4081 - 4083