Recombination lifetime of In0.53Ga0.47As as a function of doping density

被引：177

作者：

Ahrenkiel, RK ^{[1
]}

Ellingson, R ^{[1
]}

Johnston, S ^{[1
]}

Wanlass, M ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 26期

关键词：

D O I：

10.1063/1.121669

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated devices with the structure InP/In0.53Ga0.47As/InP, with a InGaAs doping range varying from 2x10(14) to 2x10(19) cm(-3) These isotype double heterostructures were doped both n and p type and were used to measure the minority-carrier lifetime of InGaAs over this doping range. At the low doping end of the series, recombination is dominated by the Shockley-Read-Hall effect. At the intermediate doping levels, radiative recombination is dominant. At the highest doping levels, Auger recombination dominates as the lifetime varies with the inverse square of the doping concentration. From fitting these data, the radiative- and Auger-recombination coefficients are deduced. (C) 1998 American Institute of Physics.

引用

页码：3470 / 3472

页数：3

共 12 条

[1]

Ahrenkiel R.K., 1995, AIP C P, V321, P412, DOI [10.1063/1.47050, DOI 10.1063/1.47050]

[2] Carrier transport in ordered and disordered In0.53Ga0.47As [J].