RADIATIVE AND NONRADIATIVE LIFETIMES IN N-TYPE AND P-TYPE 1.6 MU-M INGAAS

[1] GELMONT BL, 1983, SOV PHYS SEMICOND+, V17, P280

[2] HENRY CH, 1983, IEEE J QUANTUM ELECT, V19, P905, DOI 10.1109/JQE.1983.1071997

[3] CARRIER LIFETIME MEASUREMENT FOR DETERMINATION OF RECOMBINATION RATES AND DOPING LEVELS OF III-V SEMICONDUCTOR LIGHT-SOURCES [J]. APPLIED PHYSICS LETTERS, 1982, 41 (09) : 833 - 835

[4] COMPARISON OF BAND-TO-BAND AUGER PROCESSES IN INGAASP [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) : 930 - 932

[1] GELMONT BL, 1983, SOV PHYS SEMICOND+, V17, P280

[2] HENRY CH, 1983, IEEE J QUANTUM ELECT, V19, P905, DOI 10.1109/JQE.1983.1071997

[3] CARRIER LIFETIME MEASUREMENT FOR DETERMINATION OF RECOMBINATION RATES AND DOPING LEVELS OF III-V SEMICONDUCTOR LIGHT-SOURCES [J]. APPLIED PHYSICS LETTERS, 1982, 41 (09) : 833 - 835

[4] COMPARISON OF BAND-TO-BAND AUGER PROCESSES IN INGAASP [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) : 930 - 932