COMPARISON OF BAND-TO-BAND AUGER PROCESSES IN INGAASP

被引：16

作者：

SUGIMURA, A

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1983年 / 19卷 / 06期

关键词：

D O I：

10.1109/JQE.1983.1071953

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：930 / 932

页数：3

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共 11 条

[1] [Anonymous], 1966, SEMICONDUCTORS SEMIM
[2] INTERBAND AUGER RECOMBINATION IN INGAASP
CHIU, LC
CHEN, PC
YARIV, A
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (06) : 938 - 941
[3] DUTTA NK, 1981, APPL PHYS LETT, V38, P407, DOI 10.1063/1.92380
[4] THE CASE FOR AUGER RECOMBINATION IN IN1-XGAXASYP1-Y
DUTTA, NK
NELSON, RJ
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 74 - 92
[5] TEMPERATURE SENSITIVE THRESHOLD CURRENT OF INGAASP-INP DOUBLE HETEROSTRUCTURE LASERS
HORIKOSHI, Y
FURUKAWA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (04) : 809 - 815
[6] BAND-TO-BAND AUGER RECOMBINATION EFFECT ON INGAASP LASER THRESHOLD
SUGIMURA, A
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) : 627 - 635
[7] BAND-TO-BAND AUGER EFFECT ON THE OUTPUT POWER SATURATION IN INGAASP LEDS
SUGIMURA, A
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (04) : 441 - 444
[8] SUGIMURA A, 1982, IEEE J QUANTUM ELECT, V18, P352, DOI 10.1109/JQE.1982.1071543
[9] BAND-TO-BAND AUGER EFFECT IN GASB AND INAS LASERS
SUGIMURA, A
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4405 - 4411
[10] NONRADIATIVE CARRIER LOSS AND TEMPERATURE SENSITIVITY OF THRESHOLD IN 1.27 MU-M (GALN)(ASP)-INP DH LASERS
THOMPSON, GHB
HENSHALL, GD
[J]. ELECTRONICS LETTERS, 1980, 16 (01) : 42 - 44