CARRIER LIFETIME MEASUREMENT FOR DETERMINATION OF RECOMBINATION RATES AND DOPING LEVELS OF III-V SEMICONDUCTOR LIGHT-SOURCES

被引：55

作者：

SU, CB

OLSHANSKY, R

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 09期

关键词：

D O I：

10.1063/1.93690

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：833 / 835

页数：3

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