EFFECT OF JUNCTION CAPACITANCE ON RISE TIME OF LEDS AND ON TURN-ON DELAY OF INJECTION LASERS

被引:64
作者
LEE, TP [1 ]
机构
[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
来源
BELL SYSTEM TECHNICAL JOURNAL | 1975年 / 54卷 / 01期
关键词
D O I
10.1002/j.1538-7305.1975.tb02825.x
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:53 / 68
页数:16
相关论文
共 27 条
  • [1] BECCONE JP, UNPUBLISHED WORK
  • [2] RADIANCE OF SMALL-AREA HIGH-CURRENT-DENSITY ELECTROLUMINESCENT DIODES
    BURRUS, CA
    [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (02): : 231 - &
  • [3] BURRUS CA, TO BE PUBLISHED
  • [4] DIRECT MODULATION OF DOUBLE-HETEROSTRUCTURE LASERS AT RATES UP TO 1 GBIT-S
    CHOWN, M
    GOODWIN, AR
    LOVELACE, DF
    THOMPSON, GH
    SELWAY, PR
    [J]. ELECTRONICS LETTERS, 1973, 9 (02) : 34 - 36
  • [5] CLEMETSON WJ, UNPUBLISHED WORK
  • [6] DAWSON RN, TO BE PUBLISHED
  • [7] PULSE BEHAVIOR OF HIGH-RADIANCE SMALL-AREA ELECTROLUMINESCENT DIODES
    DAWSON, RW
    BURRUS, CA
    [J]. APPLIED OPTICS, 1971, 10 (10): : 2367 - &
  • [8] DAWSON RW, PRIVATE COMMUNICATIO
  • [9] De Loach B. C. Jr., 1973, 1973 IEEE/OSA Conference on Laser Engineering and Applications Digest of Technical Papers
  • [10] DMITRIEV AG, 1972, SOV PHYS SEMICOND+, V5, P1307