DIRECT MODULATION OF DOUBLE-HETEROSTRUCTURE LASERS AT RATES UP TO 1 GBIT-S

被引：39

作者：

CHOWN, M ^{[1
]}

GOODWIN, AR ^{[1
]}

LOVELACE, DF ^{[1
]}

THOMPSON, GH ^{[1
]}

SELWAY, PR ^{[1
]}

机构：

[1] STANDARD TELECOMMUN LABS LTD,HARLOW,ESSEX,ENGLAND

来源：

ELECTRONICS LETTERS | 1973年 / 9卷 / 02期

关键词：

D O I：

10.1049/el:19730024

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：34 / 36

页数：3

相关论文

共 8 条

[1] ADAMS MJ, 1969, GALLIUM ARSENIDE LAS, P5
[2] MEASUREMENT AND INTERPRETATION OF LONG SPONTANEOUS LIFETIMES IN DOUBLE HETEROSTRUCTURE LASERS
DYMENT, JC
LEE, TP
RIPPER, JE
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) : 452 - +
[3] GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE INJECTION LASERS
HAYASHI, I
PANISH, MB
REINHART, FK
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 1929 - &
[4] HIGHLY UNIFORM ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS AND THEIR CHARACTERISTICS AT ROOM TEMPERATURE
MILLER, BI
PINKAS, E
HAYASHI, I
FOY, PW
CAPIK, R
[J]. APPLIED PHYSICS LETTERS, 1971, 19 (09) : 340 - &
[5] DIRECT MODULATION OF SEMICONDUCTOR LASERS
PAOLI, TL
RIPPER, JE
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (10): : 1457 - +
[6] RAINES JA, 1971, SERL TECH J, V21
[7] PROPERTIES OF DOUBLE HETEROSTRUCTURE LASERS WITH VERY NARROW ACTIVE REGIONS
SELWAY, PR
GOODWIN, AR
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1972, 5 (05) : 904 - +
[8] TSUKADA T, 1972, APPL PHYS LETT, V20, P334