Sulfur forming an isoelectronic center in zinc telluride thin films

被引：20

作者：

Ge, WK ^{[1
]}

Lam, SB ^{[1
]}

Sou, IK ^{[1
]}

Wang, J ^{[1
]}

Wang, Y ^{[1
]}

Li, GH ^{[1
]}

Han, HX ^{[1
]}

Wang, ZP ^{[1
]}

机构：

[1] CHINESE ACAD SCI,INST SEMICOND,NATL LAB SUPERLATTICES & MICROSTRUCT,BEIJING 100083,PEOPLES R CHINA

来源：

PHYSICAL REVIEW B | 1997年 / 55卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.55.10035

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnTe1-xSx epitaxial layers grown on GaAs by molecular-beam epitaxy were studied by photoluminescence (PL) as a function of temperatures, excitation powers, and hydrostatic pressures. A sulfur-related emission peak, labeled as P-2, is identified as a deep-level emission by hydrostatic-pressure PL measurement. This indicates that sulfur atoms form isoelectronic centers in a ZnTe matrix. The results qualitatively agree with the theoretical prediction and show experimental evidence of isoelectronic S in ZnTe. A model is proposed to explain the emission mechanisms in the ZnTe1-xSx system with small x values.

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收藏

页码：10035 / 10039

页数：5

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