The effect of annealing on the optical absorption and electrical conduction of amorphous As24.5Te71Cd4.5 thin films

被引:63
作者
Hafiz, MM
Moharram, AH
AbdelRahim, MA
AbuSehly, AA
机构
[1] Physics Department, Faculty of Science, Assiut University, Assiut
关键词
semiconductors; optical constants; chalcogenides; glasses;
D O I
10.1016/S0040-6090(96)09091-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The optical absorption of as-prepared and thermally annealed As24.5Te71Cd4.5 thin films was measured. The optical energy gap E(0) increased from 0.58 to 0.85 eV with increasing thickness of the as-prepared films from 58 to 125 nm. Films annealed at temperatures higher than 423 K showed a decrease in E(0). The electrical conductivity of the as-prepared and annealed films was measured in the temperature range 80-300 K. An amorphous-crystalline transformation was observed after annealing at temperatures higher than 423 K. The results obtained are discussed on the basis of amorphous-crystalline transformations.
引用
收藏
页码:7 / 13
页数:7
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