The effect of annealing on the optical absorption and electrical conduction of amorphous As24.5Te71Cd4.5 thin films

被引:63
作者
Hafiz, MM
Moharram, AH
AbdelRahim, MA
AbuSehly, AA
机构
[1] Physics Department, Faculty of Science, Assiut University, Assiut
关键词
semiconductors; optical constants; chalcogenides; glasses;
D O I
10.1016/S0040-6090(96)09091-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The optical absorption of as-prepared and thermally annealed As24.5Te71Cd4.5 thin films was measured. The optical energy gap E(0) increased from 0.58 to 0.85 eV with increasing thickness of the as-prepared films from 58 to 125 nm. Films annealed at temperatures higher than 423 K showed a decrease in E(0). The electrical conductivity of the as-prepared and annealed films was measured in the temperature range 80-300 K. An amorphous-crystalline transformation was observed after annealing at temperatures higher than 423 K. The results obtained are discussed on the basis of amorphous-crystalline transformations.
引用
收藏
页码:7 / 13
页数:7
相关论文
共 28 条
[21]   ELECTRICAL AND OPTICAL-PROPERTIES OF NON-CRYSTALLINE AS-SE-CD THIN-FILMS [J].
REDDY, UK .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1985, 89 (01) :255-261
[22]  
Savage J. A., 1972, Journal of Non-Crystalline Solids, V11, P121, DOI 10.1016/0022-3093(72)90294-3
[23]   PHOTOVOLTAIC PROPERTIES OF GASE AND INSE JUNCTIONS [J].
SEGURA, A ;
BESSON, JM ;
CHEVY, A ;
MARTIN, MS .
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1977, 38 (02) :345-351
[24]   PHOTOLUMINESCENCE AND OPTICAL-PROPERTIES OF GE1-XSEX GLASSES [J].
SHIRAFUJI, J ;
KIM, GI ;
INUISHI, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (01) :67-76
[25]  
STRIDHAR R, 1990, J NONCRYST SOLIDS, V19, P331
[26]  
Tauc J., 1974, AMORPHOUS LIQUID SEM
[27]   THE LONG-WAVELENGTH EDGE OF PHOTOGRAPHIC SENSITIVITY AND OF THE ELECTRONIC ABSORPTION OF SOLIDS [J].
URBACH, F .
PHYSICAL REVIEW, 1953, 92 (05) :1324-1324
[28]  
VENGEL TN, 1957, SOV PHYS-TECH PHYS, V2, P2314