Low-temperature-fabricated InGaZnO4 thin film transistors on polyimide clean-room tape

被引：37

作者：

Lim, Wantae ^{[1
]}

Douglas, E. A. ^{[1
]}

Kim, S.-H. ^{[1
]}

Norton, D. P. ^{[1
]}

Pearton, S. J. ^{[1
]}

Ren, F. ^{[2
]}

Shen, H. ^{[3
]}

Chang, W. H. ^{[3
]}

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[3] Army Res Lab, Sensors & Electron Devices Directorate, Adelphi, MD 20783 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 25期

基金：

美国国家科学基金会;

关键词：

carrier density; carrier mobility; flexible electronics; gallium compounds; indium compounds; polymers; semiconductor growth; semiconductor thin films; sputter deposition; substrates; ternary semiconductors; thin film transistors; zinc compounds;

D O I：

10.1063/1.3054167

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Amorphous (alpha-)InGaZnO4 thin film transistors (TFTs) were fabricated on polyimide clean-room tape at low temperature (< 100 degrees C). The alpha-InGaZnO4 films with an n-type carrier concentration of similar to 10(16) cm(-3) were deposited by rf-magnetron sputtering in a mixed ambient of Ar/O-2. The bottom-gate-type TFTs showed good saturation mobility (similar to 5.3 cm(2) V-1 s(-1)), drain current on-to-off ratio of approximately 10(5), threshold voltage of 1.1 V, and subthreshold gate-voltage swing of 0.55 V decade(-1). These results were comparable to those of the same oxide TFTs that we have fabricated on either glass or polyethylene terephthalate substrates. The results demonstrate that even polyimide clean-room tape can be an appropriate substrate for inexpensive-flexible-adhesive-transparent electronic devices.

引用

页数：3

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