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Nonlinear I-V characteristics of nanocrystalline SnO2
被引:17
作者:
Bose, AC
Thangadurai, P
Ramasamy, S
Ganesan, V
Asokan, S
机构:
[1] Univ Madras, Dept Nucl Phys, Madras 600025, Tamil Nadu, India
[2] Indian Inst Sci, Dept Instrumentat, Bangalore 560012, Karnataka, India
关键词:
D O I:
10.1088/0957-4484/17/6/035
中图分类号:
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
Current versus voltage characteristics (I-V) of nanocrystalline SnO2 materials have been investigated in air at room temperature. The samples were prepared by the inert gas condensation technique (IGCT) as well as by chemical methods. X-ray diffraction studies showed a tetragonal rutile structure for all the samples. Microstructural studies were performed with transmission electron microscopy. All the samples exhibited nonlinear I-V characteristics of the current-controlled negative resistance (CCNR) type. The results show that the threshold field (break down) voltage is higher for the samples prepared by the IGCT method than for those prepared by the chemical method due to the formation of a tin oxide layer over the crystalline tin. It is also found that the threshold field increases with the decrease in grain size.
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页码:1752 / 1757
页数:6
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