Size and grain-boundary effects of a gold nanowire measured by conducting atomic force microscopy

被引:85
作者
Bietsch, A [1 ]
Michel, B [1 ]
机构
[1] IBM Corp, Zurich Res Lab, Res, CH-8803 Ruschlikon, Switzerland
关键词
D O I
10.1063/1.1473868
中图分类号
O59 [应用物理学];
学科分类号
摘要
The resistivities of thin metal films and wires are highly sensitive to their polycrystalline structure and surface morphology because grain boundaries and surfaces provide additional scattering sites compared to bulk materials. Here, we investigated polycrystalline gold wires of nanometer-scale diameter that were-at some locations-connected through single grain boundaries. A detailed topography of the wires was recorded by atomic force microscopy. A Pt-coated tip in a conducting atomic force microscopy setup served as a mobile electrode to probe the resistance of a wire. Analyzing the topographical cross section and the resistance data allowed us to evaluate the effective specific resistivity of the wire as well as reflection coefficients of single grain boundaries. (C) 2002 American Institute of Physics.
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页码:3346 / 3348
页数:3
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