Tunnel magnetoresistance in Ni80Fe20/Al2O3/Co/Al2O3/Co junctions

被引：9

作者：

Kubota, H ^{[1
]}

Watabe, T ^{[1
]}

Miyazaki, T ^{[1
]}

机构：

[1] Tohoku Univ, Dept Appl Phys, Aoba Ku, Sendai, Miyagi 9808579, Japan

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1999年 / 198-99卷

关键词：

tunnel magnetoresistance; double barrier junction; direct sputtering;

D O I：

10.1016/S0304-8853(98)01043-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Tunnel magnetoresistance (TMR) effect has been investigated in Ni80Fe20/Al2O3/Co/Al2O3/Co double tunnel junctions. The Al2O3 layer was formed by a direct sputtering method with an Al2O3 target. The dependence of the tunnel resistance and the MR ratio on the thickness of Al2O3 and that of the central Co layer were investigated. The relation between the structure of the interface and TMR effect was discussed. (C) 1999 Elsevier Science B.V. All rights reserved.

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页码：173 / 175

页数：3

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