Spin-valve-like properties and annealing effect in ferromagnetic tunnel junctions

被引：54

作者：

Sato, M

Kobayashi, K

机构：

[1] Fujitsu Laboratories Ltd., Atsugi 243-01

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1997年 / 33卷 / 05期

关键词：

D O I：

10.1109/20.619495

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We fabricated ferromagnetic tunnel junctions with naturally oxidized Al barriers, and investigated the effects of Al oxidization time, Al thickness and annealing temperature on the tunnel properties. Changes of between 10 and 15% have been observed in the resistance, and in some junctions, the MR ratios increase by annealing at 250 to 300 degrees C. The Ni-Fe/Co/Al-AlOx/Co/Ni-Fe/Fe-Mn/Ni-Fe junction showed a 24% spin-valve-like MR change after annealing at 300 degrees C for one hour.

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收藏

页码：3553 / 3555

页数：3

相关论文

共 10 条

[1] TUNNELING BETWEEN FERROMAGNETIC-FILMS [J].

JULLIERE, M .

PHYSICS LETTERS A, 1975, 54 (03) :225-226

[2] ELECTRON-TUNNELING BETWEEN FERROMAGNETIC-FILMS [J].

MAEKAWA, S ;

GAFVERT, U .

IEEE TRANSACTIONS ON MAGNETICS, 1982, 18 (02) :707-708

[3] SPIN-POLARIZED ELECTRON-TUNNELING [J].

MESERVEY, R ;

TEDROW, PM .

PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 1994, 238 (04) :173-243

[4]

MIYAZAKI T, 1995, J MAGN MAGN MATER, V139, pL231, DOI 10.1016/0304-8853(94)01648-8

[5] Geometrically enhanced magnetoresistance in ferromagnet-insulator-ferramagnet tunnel junctions [J].

Moodera, JS ;

Kinder, LR ;

Nowak, J ;

LeClair, P ;

Meservey, R .

APPLIED PHYSICS LETTERS, 1996, 69 (05) :708-710

[6] LARGE MAGNETORESISTANCE AT ROOM-TEMPERATURE IN FERROMAGNETIC THIN-FILM TUNNEL-JUNCTIONS [J].

MOODERA, JS ;

KINDER, LR ;

WONG, TM ;

MESERVEY, R .

PHYSICAL REVIEW LETTERS, 1995, 74 (16) :3273-3276

[7]

PARKIN SSP, 1996, 41 ANN C MAGN MAGN M, P217

[8] Spin-valve-like properties of ferromagnetic tunnel junctions [J].

Sato, M ;

Kobayashi, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1997, 36 (2B) :L200-L201

[9] GENERALIZED FORMULA FOR ELECTRIC TUNNEL EFFECT BETWEEN SIMILAR ELECTRODES SEPARATED BY A THIN INSULATING FILM [J].

SIMMONS, JG .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) :1793-&

[10] CONDUCTANCE AND EXCHANGE COUPLING OF 2 FERROMAGNETS SEPARATED BY A TUNNELING BARRIER [J].

SLONCZEWSKI, JC .

PHYSICAL REVIEW B, 1989, 39 (10) :6995-7002