Mid-gap state formed inside Mott gap of 1T-TaS2 single crystals and metal-insulator transition

被引：9

作者：

Isa, T ^{[1
]}

Fukase, T

Sasaki, M

Koyano, M

Taniguchi, N

Kimura, T

Isobe, Y

Negishi, H

机构：

[1] Hiroshima Univ, Grad Sch Adv Sci Matter, Higashihiroshima 7398526, Japan

[2] Yamagata Univ, Fac Sci, Dept Phys, Yamagata 9908560, Japan

[3] Univ Tsukuba, Inst Phys, Tsukuba, Ibaraki 3058571, Japan

[4] NTT Corp, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

JOURNAL OF LOW TEMPERATURE PHYSICS | 2002年 / 127卷 / 1-2期

关键词：

D O I：

10.1023/A:1014749121869

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have measured electrical resistivity, Hall coefficient, thermoelectric power, and magnetization for charge-density, wave (CDW) material 1T-TaS2 single crystals grown by varying the excess sulfur content x(es). We have revealed that a small mid-gap state is joined inside the Mott gap and that anomalous low, temperature transport is not governed by the Mott gap state itself but by the mid-gap state, The electric properties of the mid-gap state are modified by increasing x, (or hole doping), and we have found the insulator-metal transition occurs by hole doping below 60 K.

引用

页码：63 / 79

页数：17

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