Preparation of layered ferroelectric Bi2SrTa2O9 single-crystal platelets

被引:19
作者
Suzuki, M
Nagasawa, N
Machida, A
Ami, T
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1996年 / 35卷 / 5A期
关键词
ferroelectric; ferroelectric random access memory; single crystal; etching; self-flux method; crystal growth;
D O I
10.1143/JJAP.35.L564
中图分类号
O59 [应用物理学];
学科分类号
摘要
Layered ferroelectric Bi2SrTa2O9 is attracting much attention as a fatigue-free material for ferroelectric nonvolatile memory devices. We have successfully synthesized this single-crystal platelet without any impurity phases by the self-flux method. The largest crystals measure about 1 mm x 1 mm x 5 mu m, and the lattice parameters were estimated to be a = 0.5528 nm and c = 2.498 nm, assuming a tetragonal cell. The chemical composition is 1.92:1.10:2.00 in an atomic ratio of Bi:Sr:Ta, from ICP-AES analysis. By wet etching, the crystal structure was found to be decomposed anisotropically, leaving only the c-axis framework. The step height of the topmost surface observed by atomic force microscopy (AFM) was 1.2 to 1.3 nm, which corresponds to half of the c-axis length (about 2.5 nm). Through thermal analysis, the thermal anomaly originating in ferroelestric-paraelectric phase transition was not observed and there was Little evaporation of Bi compounds.
引用
收藏
页码:L564 / L567
页数:4
相关论文
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