Electrothermal oscillations of a PN junction operating in avalanche breakdown region

被引：13

作者：

Brambilla, A ^{[1
]}

Premoli, A ^{[1
]}

机构：

[1] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy

来源：

IEEE ELECTRON DEVICE LETTERS | 1999年 / 20卷 / 08期

关键词：

avalanche breakdown; electrothermal oscillations;

D O I：

10.1109/55.778159

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We consider a simple circuit composed of a diode operating in the avalanche breakdown region (ABR), a capacitor and a constant current source. Through a nonlinear analysis, we show the existence of oscillations caused by the combined action of thermal and electrical behaviors of the device. This analysis is confirmed by simulations and experiments.

引用

页码：405 / 408

页数：4

共 5 条

[1]

Desoer C. A., 1987, LINEAR NONLINEAR CIR

[2]

DIMARIO D, 1981, WIRELESS WORLD, P75

[3] MULTIPLE EQUILIBRIUM POINTS AND THEIR SIGNIFICANCE IN THE 2ND BREAKDOWN OF BIPOLAR-TRANSISTORS [J].

LATIF, M ;

BRYANT, PR .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1981, 16 (01) :8-15

[4]

*U CAL, 1975, ERLM520 U CAL COLL E

[5] NEGATIVE-RESISTANCE CHARACTERISTICS OF ZENER DIODE AT ONSET OF AVALANCHE BREAKDOWN [J].

ZHANG, HB ;

TAKAOKA, A ;

URA, K .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1994, 77 (06) :899-905

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