Weak localization, interaction effects, and the metallic phase in p-SiGe -: art. no. 125328

被引:42
作者
Coleridge, PT [1 ]
Sachrajda, AS [1 ]
Zawadzki, P [1 ]
机构
[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
关键词
D O I
10.1103/PhysRevB.65.125328
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Magnetoresistance results are presented for p-SiGe samples on the metallic side of the B=0 metal-insulator transition. It was possible to separate the weak localization and Zeeman interaction effects but the results could not be explained quantitatively within the framework of standard theories for quantum corrections of a weakly interacting two-dimensional system. Analysis using a theory for interaction corrections at intermediate temperatures, recently proposed by Zala, Narozhny, and Aleiner provided values of the Fermi-liquid parameter F-0(sigma) of order -0.5. Similar values also explain the linear increase of resistance with temperature characteristic of the metallic phase.
引用
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页码:1 / 10
页数:10
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