A new fabrication method for ultra small tunnel junctions

被引:42
作者
Ono, K [1 ]
Shimada, H [1 ]
Kobayashi, SI [1 ]
Ootuka, Y [1 ]
机构
[1] UNIV TOKYO,FAC SCI,DEPT PHYS,BUNKYO KU,TOKYO 113,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 4A期
关键词
microfabrication; tunnel junctions; electron beam lithography; single electron charging effect; vacuum deposition;
D O I
10.1143/JJAP.35.2369
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have developed a new method for fabrication of microstructures. Using a Si3N4 membrane with small windows as a mask, a metal film with fine structure is vacuum deposited directly onto a substrate. By means of piezoelectric actuators which slide the mask on the substrate, we have fabricated an array of Al/AlOx/Al small tunnel junctions. This method has the important advantage that the lift-off process after vacuum deposition is not necessary. The use of rf plasma oxidation to form the tunnel barrier is another advantage of this method. We have fabricated a Ni/NiO/Fe small junction array with a junction area of 0.01 mu m(2) using plasma oxidation and double-angle evaporation.
引用
收藏
页码:2369 / 2371
页数:3
相关论文
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DOLAN, GJ .
APPLIED PHYSICS LETTERS, 1977, 31 (05) :337-339
[2]  
Grabert H., 1992, Single Charge Tunneling