Increased-area oxidised single-fundamental mode VCSEL with self-aligned shallow etched surface relief

被引：43

作者：

Unold, HJ ^{[1
]}

Grabherr, M ^{[1
]}

Eberhard, F ^{[1
]}

Mederer, F ^{[1
]}

Jäger, R ^{[1
]}

Riedl, M ^{[1
]}

Ebeling, KJ ^{[1
]}

机构：

[1] Univ Ulm, Dept Optoelect, D-89069 Ulm, Germany

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 16期

关键词：

D O I：

10.1049/el:19990952

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A self-aligning fabrication process is presented for enhancing the fundamental singlemode emission of selectively oxidised vertical cavity surface emitting lasers using a surface relief etching technique. The mechanism underlying the increase in threshold gain due to the use of a shallow surface relief is described and the results obtained for a 7 mu m device at 850nm are presented.

引用

页码：1340 / 1341

页数：2

共 5 条

[1] Vertical-cavity surface emitting lasers: Moving from research to manufacturing [J].