4.8 mW singlemode oxide confined top-surface emitting vertical-cavity laser diodes

被引：146

作者：

Jung, C ^{[1
]}

Jager, R ^{[1
]}

Grabherr, M ^{[1
]}

Schnitzer, P ^{[1
]}

Michalzik, R ^{[1
]}

Weigl, B ^{[1
]}

Muller, S ^{[1
]}

Ebeling, KJ ^{[1
]}

机构：

[1] Univ Ulm, Dept Optoelect, D-89069 Ulm, Germany

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 21期

关键词：

vertical cavity surface emitting lasers; optical interconnections;

D O I：

10.1049/el:19971207

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors have optimised MBE-grown GaAs VCSELs emitting at a wavelength of 840 nm for maximum singlemode output power. Devices of 3.51 mu m diameter show a record high singlemode CW output power of 4.8 mW and a butt-coupling efficiency into singlemode fibre of > 80%.

引用

页码：1790 / 1791

页数：2

共 8 条

[1]

CHOQUETTE KD, 1997, 1997 SUMM TOP M VERT

[2]

GRABHERR M, 1997, UNPUB IEEE PHOTONICS

[3]

HEADLEY GR, 1995, OPT LETT, V20, P1483

[4] 57% wallplug efficiency oxide-confined 850nm wavelength GaAs VCSELs [J].