57% wallplug efficiency oxide-confined 850nm wavelength GaAs VCSELs

被引：165

作者：

Jager, R

Grabherr, M

Jung, C

Michalzik, R

Reiner, G

Weigl, B

Ebeling, KJ

机构：

[1] University of Ulm, Department of Optoelectronics

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 04期

关键词：

vertical cavity surface emitting lasers; gallium arsenide;

D O I：

10.1049/el:19970193

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Vertical-cavity surface-emitting lasers with reduced effective index guiding of the optical wave show a record performance. GaAs based 850 nm emission wavelength VCSELs are fabricated using solid source MBE and carbon p-type doping. Depending on device design maximum room temperature conversion efficiencies of 57%, an operating range from -80 degrees C up to +185 degrees C, and threshold currents below 500 mu A from -40 to +80 degrees C have been obtained.

引用

页码：330 / 331

页数：2

共 13 条

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