LASING CHARACTERISTICS OF LOW-THRESHOLD OXIDE CONFINEMENT INGAAS-GAALAS VERTICAL-CAVITY SURFACE-EMITTING LASERS

被引：27

作者：

HAYASHI, Y

MUKAIHARA, T

HATORI, N

OHNOKI, N

MATSUTANI, A

KOYAMA, F

IGA, K

机构：

[1] Tokyo Institute of Technology, Precision and Intelligence Laboratory, Midoriku, Yokohama 226

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1995年 / 7卷 / 11期

关键词：

D O I：

10.1109/68.473456

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Some lasing characteristics of index-guided InGaAs-GaAlAs vertical-cavity surface-emitting lasers (VCSEL's) with a native oxide confinement structure, which early provided a low threshold current of 70 mu A, are presented. It was found that nonradiative recombination was reduced and the estimated surface recombination velocity was almost negligible. The oxidation process was uniform to produce low threshold devices still the oxidation rate was dependent on the doping or compositions of DBR's.

引用

页码：1234 / 1236

页数：3

共 8 条

[1] LOW-THRESHOLD VOLTAGE VERTICAL-CAVITY LASERS FABRICATED BY SELECTIVE OXIDATION [J].