REACTIVE ION-BEAM ETCH OF GAINASP INP MULTILAYER AND REMOVAL OF DAMAGED LAYER BY 2 STEP ETCH

被引：16

作者：

MATSUTANI, A

KOYAMA, F

IGA, K

机构：

[1] Precision and Intelligence Laboratory, Tokyo Institute of Technology, Midori-ku, Yokohama, 227

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 9A期

关键词：

REACTIVE ION BEAM ETCHING; GAINASP/INP SEMICONDUCTOR MULTILAYER; VERTICAL CAVITY SURFACE EMITTING LASER; SURFACE DAMAGE;

D O I：

10.1143/JJAP.30.2123

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Reactive ion beam etching (RIBE) is studied as a method to form a tiny reflector and microstructure for vertical cavity surface emitting lasers. Appropriate etching conditions with a chlorine gas for GaInAsP, InP, and GaAs have been obtained using RIBE. Microsized circular mesas including GaInAsP/InP multilayers with vertical side walls were fabricated. RIBE-induced damages in InP substrates were estimated to be localized within a depth of approximately 1000 angstrom from the surface by capacitance-voltage (C-V) measurement. In addition, the removal of the induced damage by the second RIBE with different conditions for the InP wafer was proposed.

引用

页码：2123 / 2126

页数：4

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