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ELECTRICAL AND STRUCTURAL-CHANGES IN THE NEAR-SURFACE OF REACTIVELY ION ETCHED INP

被引：82
作者：
PEARTON, SJ
CHAKRABARTI, UK
BAIOCCHI, FA
机构：
来源：
APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 16期
关键词：
D O I：
10.1063/1.102221
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1633 / 1635
页数：3
相关论文
共 25 条
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    [J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (05) : 1993 - 1996
  • [10] PASSIVATION OF ACCEPTORS IN INP RESULTING FROM CH4/H2 REACTIVE ION ETCHING
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    [J]. APPLIED PHYSICS LETTERS, 1989, 55 (01) : 56 - 58
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